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fcp600n60z / fcpf600 n60z n-channel mosfet ?2012 fairchild semiconductor corporation fcp600n60z / FCPF600N60Z rev. c2 www.fairchildsemi.com 1 march 2013 mosfet maximum ratings t c = 25 o c unless otherwise noted *drain current limited by maximum junction temperature thermal characteristics symbol parameter fcp600n60z FCPF600N60Z unit v dss drain to source voltage 600 v v gss gate to source voltage - dc 20 v - ac (f > 1 hz) 30 v i d drain current -continuous (t c = 25 o c) 7.4 7.4* a -continuous (t c = 100 o c) 4.7 4.7* i dm drain current - pulsed (note 1) 22.2 22.2* a e as single pulsed avalanche energy (note 2) 135 mj i ar avalanche current (note 1) 1.5 a e ar repetitive avalanche energy (note 1) 0.89 mj dv/dt peak diode recovery dv/dt (note 3) 20 v/ns mosfet dv/dt 100 v/ns p d power dissipation (t c = 25 o c) 89 28 w - derate above 25 o c 0.71 0.22 w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter fcp600n60z FCPF600N60Z unit r jc thermal resistance, junction to case 1.4 4.5 o c/w r ja thermal resistance, junction to ambient 62.5 62.5 fcp600n60z / FCPF600N60Z n-channel superfet ? ii mosfet 600 v, 7.4 a, 600 m features ? 650 v @t j = 150c ?max. r ds(on) = 600 m ? ultra low gate charge (typ. q g = 20 nc) ? low effective output capacitance (typ. c oss .eff = 74 pf) ? 100% avalanche tested ? esd improved capacity applications ? lcd / led / pdp tv and monitor lighting ? solar inverter ? ac-dc power supply description superfet ? ii mosfet is fairchild semiconductor ? ?s first gen- eration of high voltage super-junction (sj) mosfet family that is utilizing charge balance technology for outstanding low on-resis- tance and lower gate charge performance.this advanced tech- nology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. consequently, superfetii mosfet is suitable for various ac/dc power conversion for system minia- turization and higher efficiency. to-220f g s d to-220 g d s g s d g s d
fcp600n60z / fcpf600 n60z n-channel mosfet www.fairchildsemi.com 2 ?2012 fairchild semiconductor corporation fcp600n60z / FCPF600N60Z rev. c2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity fcp600n60z fcp600n60z to-220 - - 50 FCPF600N60Z FCPF600N60Z to-220f - - 50 symbol parameter test conditions min. typ. max. unit bv dss drain to source breakdown voltage v gs = 0 v, i d = 10 ma, t j = 25 c 600 - - v v gs = 0 v, i d = 10 ma, t j = 150 c 650 - - v bv dss t j breakdown voltage temperature coefficient i d = 10 ma, referenced to 25 o c - 0.67 - v/ o c bv ds drain-source avalanche breakdown voltage v gs = 0 v, i d = 7.4 a - 700 - v i dss zero gate voltage drain current v ds = 480 v, v gs = 0 v - - 1 a v ds = 480 v, t c = 125 o c--10 i gss gate to body leakage current v gs = 20 v, v ds = 0 v - - 10 ua v gs(th) gate threshold voltage v gs = v ds , i d = 250 a2.5-3.5v r ds(on) static drain to source on resistance v gs = 10 v, i d = 3.7 a - 0.51 0.6 g fs forward transconductance v ds = 20 v, i d = 3.7 a -6.7-s c iss input capacitance v ds = 25 v, v gs = 0 v f = 1 mhz - 840 1120 pf c oss output capacitance - 630 840 pf c rss reverse transfer capacitance - 30 45 pf c oss output capacitance v ds = 380 v, v gs = 0 v, f = 1.0 mhz - 16.5 - pf c oss eff. effective output capacitance v ds = 0 v to 480 v, v gs = 0 v - 74 - pf q g(tot) total gate charge at 10v v ds = 380 v, i d = 3.7 a v gs = 10 v (note 4) -2026nc q gs gate to source gate charge - 3.4 - nc q gd gate to drain ?miller? charge - 7.5 - nc esr equivalent series resistance drain open -2.89- t d(on) turn-on delay time v dd = 380 v, i d = 3.7 a v gs = 10 v, r g = 4.7 (note 4) -1336ns t r turn-on rise time - 7 24 ns t d(off) turn-off delay time - 39 88 ns t f turn-off fall time - 9 28 ns i s maximum continuous drain to source diode forward current - - 7.4 a i sm maximum pulsed drain to source diode forward current - - 22.2 a v sd drain to source diode forward voltage v gs = 0 v, i sd = 3.7 a - - 1.2 v t rr reverse recovery time v gs = 0 v, i sd = 3.7 a di f /dt = 100 a/ s - 200 - ns q rr reverse recovery charge - 2.3 - c notes: 1. repetitive rating: pulse width limi ted by maximum junction temperature 2. i as = 1.5 a, v dd = 50 v, r g = 25 , starting t j = 25 c 3. i sd 3.7 a, di/dt 200 a/ s, v dd bv dss , starting t j = 25 c 4. essentially independent of operating temperature typical characteristics fcp600n60z / fcpf600 n60z n-channel mosfet www.fairchildsemi.com 3 ?2012 fairchild semiconductor corporation fcp600n60z / FCPF600N60Z rev. c2 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 2345678 0.2 1 10 50 -55 o c 150 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0.2 1 10 20 0.4 1 10 20 *notes: 1. 250 s pulse test 2. t c = 25 o c i d , drain current[a] v ds , drain-source voltage[v] v gs = 10.0v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v 0.20.40.60.81.01.21.4 1 10 100 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0 4 8 12 16 20 0.2 0.4 0.6 0.8 1.0 1.2 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ ], drain-source on-resistance i d , drain current [a] 0.1 1 10 100 600 0.5 1 10 100 1000 10000 c oss c iss c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 0 5 10 15 20 25 0 2 4 6 8 10 *note: i d = 3.7a v ds = 120v v ds = 300v v ds = 480v v gs , gate-source voltage [v] q g , total gate charge [nc] fcp600n60z / fcpf600 n60z n-channel mosfet www.fairchildsemi.com 4 ?2012 fairchild semiconductor corporation fcp600n60z / FCPF600N60Z rev. c2 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum safe operating area vs. case temperature - fcp600n60z vs. case temperature - FCPF600N60Z figure 11. maximum drain current figure 12. eoss vs. drain to source voltage switching capability -80 -40 0 40 80 120 160 0.88 0.92 0.96 1.00 1.04 1.08 1.12 *notes: 1. v gs = 0v 2. i d = 10ma bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c] -80 -40 0 40 80 120 160 0.5 1.0 1.5 2.0 2.5 *notes: 1. v gs = 10v 2. i d = 3.7a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c] 0.1 1 10 100 1000 0.01 0.1 1 10 100 10 s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 0.1 1 10 100 1000 0.1 1 10 50 10 s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 0 100 200 300 400 500 600 0 1 2 3 4 e oss , [ j] v ds , drain to source voltage [v] 25 50 75 100 125 150 0 2 4 6 8 i d , drain current [a] t c , case temperature [ o c] fcp600n60z / fcpf600 n60z n-channel mosfet www.fairchildsemi.com 5 ?2012 fairchild semiconductor corporation fcp600n60z / FCPF600N60Z rev. c2 typical performance characteristics (continued) figure 13. transient thermal response curve - fcp600n60z figure 14. transient thermal response curve - FCPF600N60Z 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 0.01 0.1 1 2 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 1.4 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [z jc ] rectangular pulse duration [sec] t 1 p dm t 2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 100 0.1 1 5 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 4.5 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [z jc ] rectangular pulse duration [sec] t 1 p dm t 2 fcp600n60z / fcpf600 n60z n-channel mosfet www.fairchildsemi.com 6 ?2012 fairchild semiconductor corporation fcp600n60z / FCPF600N60Z rev. c2 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms fcp600n60z / fcpf600 n60z n-channel mosfet www.fairchildsemi.com 7 ?2012 fairchild semiconductor corporation fcp600n60z / FCPF600N60Z rev. c2 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- fcp600n60z / fcpf600 n60z n-channel mosfet www.fairchildsemi.com 8 ?2012 fairchild semiconductor corporation fcp600n60z / FCPF600N60Z rev. c2 mechanical dimensions to-220ab fcp600n60z / fcpf600 n60z n-channel mosfet www.fairchildsemi.com 9 ?2012 fairchild semiconductor corporation fcp600n60z / FCPF600N60Z rev. c2 package dimensions dimensions in millimeters to-220f (retractable) * front/back side isolation voltage : ac 2500v fcp600n60z / FCPF600N60Z n-channel mosfet www.fairchildsemi.com 10 ?2012 fairchild semiconductor corporation fcp600n60z / FCPF600N60Z rev. c2 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairch ild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions , specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a sign ificant injury of the user. 2. a critical component in any com ponent of a life support, device, or system whose failure to perform can be reasonably ex pected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? accupower? ax-cap ? * bitsic? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? fps? f-pfs? frfet ? global power resource sm green bridge? green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? marking small speakers sound louder and better? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? mwsaver? optohit? optologic ? optoplanar ? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? solutions for your success? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* tinyboost? tinybuck? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? transic ? trifault detect? truecurrent ? * serdes? uhc ? ultra frfet? unifet? vcx? visualmax? voltageplus? xs? ? ? datasheet identification product status definition advance information for mative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor re serves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product t hat is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-c ounterfeiting policy. fairchild?s anti-count erfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in the industry. all manuf actures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadv ertently purchase counterfeit parts experience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of producti on and manufacturing delays. fairchild is taki ng strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. product s customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchil d will not provide any warranty coverage or other assistance for pa rts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping th is practice by buying direct or from authorized distributors. rev. i64 tm ? |
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